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CAT28C256
Page Write
The page write mode of the CAT28C256 (essentially an
extended BYTE WRITE mode) allows from 1 to 64 bytes of
data to be programmed within a single EEPROM write
cycle. This effectively reduces the byte ? write time by a
factor of 64.
Following an initial WRITE operation (WE pulsed low,
for t WP , and then high) the page write mode can begin by
issuing sequential WE pulses, which load the address and
data bytes into a 64 byte temporary buffer. The page address
where data is to be written, specified by bits A 6 to A 14 , is
latched on the last falling edge of WE. Each byte within the
page is defined by address bits A 0 to A 5 (which can be loaded
in any order) during the first and subsequent write cycles.
Each successive byte load cycle must begin within t BLC MAX
of the rising edge of the preceding WE pulse. There is no
page write window limitation as long as WE is pulsed low
within t BLC MAX .
Upon completion of the page write sequence, WE must
stay high a minimum of t BLC MAX for the internal automatic
program cycle to commence. This programming cycle
consists of an erase cycle, which erases any data that existed
in each addressed cell, and a write cycle, which writes new
data back into the cell. A page write will only write data to
the locations that were addressed and will not rewrite the
entire page.
t WC
ADDRESS
t AS
t AH
t BLC
t CW
CE
t OEH
OE
t CS
t OES
t CH
WE
HIGH ? Z
DATA OUT
DATA IN
DATA VALID
t DS
t DH
Figure 6. Byte Write Cycle [CE Controlled]
OE
CE
t WP
t BLC
WE
ADDRESS
t WC
I/O
LAST BYTE
BYTE 0
BYTE 1
BYTE 2
BYTE n
BYTE n+1
BYTE n+2
Figure 7. Page Mode Write Cycle
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